power transistors 1 publication date: april 2003 sjd00045aed parameter symbol conditions min typ max unit collector-emitter voltage 2sb1169 v ceo i c = ? 30 ma, i b = 0 ? 60 v (base open) 2SB1169A ? 80 base-emitter voltage v be v ce = ? 4 v, i c = ? 1 a ? 1.3 v collector-emitter cutoff 2sb1169 i ces v ce = ? 60 v, v be = 0 ? 200 a current (e-b short) 2SB1169A v ce = ? 80 v, v be = 0 ? 200 collector-emitter cutoff 2sb1169 i ceo v ce = ? 30 v, i b = 0 ? 300 a current (base open) 2SB1169A v ce = ? 60 v, i b = 0 ? 300 emitter-base cutoff current (collector open) i ebo v eb = ? 5 v, i c = 0 ? 1ma forward current transfer ratio h fe1 * v ce = ? 4 v, i c = ? 0.2 a 40 450 ? h fe2 v ce = ? 4 v, i c = ? 1 a 15 collector-emitter saturation voltage v ce(sat) i c = ? 1 a, i b = ? 0.125 a ? 1v transition frequency f t v ce = ? 10 v, i c = ? 0.5 a, f = 10 mhz 40 mhz turn-on time t on i c = ? 1 a, i b1 = ? 50 ma, i b2 = 50 ma 0.5 s strage time t stg v cc = ? 50 v 1.2 s fall time t f 0.3 s 2sb1169, 2SB1169A silicon pnp epitaxial planar type for power amplification features ? high forward current transfer ratio h fe which has satisfactory linearity ? low collector-emitter saturation voltage v ce(sat) ? i type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c 7.0 0.3 3.5 0.2 0? to 0.15? 12.6 0.3 7.2 0.3 2.5 0.2 2.5 0.2 (1.0) (1.0) 1.0 0.2 3.0 0.2 2.0 0.2 1.1 0.1 0.75 0.1 0.9 0.1 0? to 0.15? 0.4 0.1 2.3 0.2 4.6 0.4 123 unit : mm 1: base 2: collector 3: emitter i-g1 package parameter symbol rating unit collector-base voltage 2sb1169 v cbo ? 60 v (emitter open) 2SB1169A ? 80 collector-emitter voltage 2sb1169 v ceo ? 60 v (base open) 2SB1169A ? 80 emitter-base voltage (collector open) v ebo ? 5v collector current i c ? 1a peak collector current i cp ? 2a collector power dissipation p c 15 w t a = 25 c 1.3 junction temperature t j 150 c storage temperature t stg ? 55 + 150 c rank r q p o h fe1 40 to 90 70 to 150 120 to 250 200 to 450 note) self-supported type package is also prepared. note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification
2sb1169, 2SB1169A 2 sjd00045aed v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be safe operation area r th ? t 0 0 160 40 120 80 5 15 10 20 collector power dissipation p c ( w ) ambient temperature t a ( c ) (1)t c =ta (2)without heat sink (p c =1.3w) (1) (2) 0 ? 0.5 ? 1.0 ? 1.5 ? 2.5 ? 2.0 0 ? 6 ? 1 ? 5 ? 2 ? 4 ? 3 collector current i c ( a ) collector-emitter voltage v ce ( v ) t c =25?c i b =?0ma ?0ma ?5ma ?0ma ?0ma ?ma ?ma ?ma ?ma 0 ? 2.0 ? 1.6 ? 1.2 ? 0.8 ? 0.4 0 ? 2 ? 4 ? 6 ? 10 ? 8 collector current i c ( a ) base-emitter voltage v be ( v ) t c =100?c 25?c v ce =?v ?5?c ? 0.01 ? 0.01 ? 0.1 ? 1 ? 10 ? 100 ? 0.1 ? 1 ? 10 i c /i b =10 25?c t c =100?c ?5?c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) ? 0.01 ? 0.1 ? 1 ? 10 1 10 forward current transfer ratio h fe collector current i c ( a ) 10 2 10 4 10 3 v ce =?v t c =100?c 25?c ?5?c ? 0.01 ? 0.1 ? 1 ? 10 1 10 transition frequency f t ( mhz ) collector current i c ( a ) 10 2 10 4 10 3 v ce =?v f=10mhz t c =25?c ? 0.01 ? 1 ? 0.1 ? 1 ? 10 ? 100 ? 10 ? 100 ? 1 000 non repetitive pulse t c =25?c t=10ms t=300ms t=1ms i cp i c 2SB1169A 2sb1169 collector current i c ( a ) collector-emitter voltage v ce ( v ) (1) (2) (1)without heat sink (2)with a 50 50 2mm al heat sink 10 ? 1 1 10 10 3 10 2 thermal resistance r th ( c/w) time t (s) 10 ? 3 10 4 10 3 10 2 10 1 10 ? 1 10 ? 2
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